Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
Tin-lead (SnPb) mixed perovskite solar cells have emerged as prominent candidates for high-efficiency single-junction and all-perovskite tandem solar cell applications. Hole-transport-layer-free (HTL-free / HTL-less) device architectures are particularly attractive due to their simplified manufacturing process, reduced production costs, and potential for superior long-term stability. However, HTL-less SnPb perovskite devices traditionally suffer from inferior power conversion efficiency (PCE) compared to their layered counterparts, primarily driven by severe charge carrier recombination occurring at the non-passivated interfaces and within the active layer. In this work, we demonstrate a doping strategy by introducing germanium (Ge) into the precursor perovskite ink to mitigate recombination losses and substantially elevate both initial efficiency and operational stability in HTL-less SnPb perovskite solar cells. Incorporating germanium (Ge) significantly boosts the initial photovoltaic performance. Under continuous thermal stress at 85°C over 650 hours, the SnPbGe-doped device maintains higher absolute PCE metrics throughout the test, holding higher PCE compared to the control devices. The light stability evaluation over 24 hours of continuous operational tracking reveals that the germanium-doped HTL-less device maintains a stabilized PCE with minimal decay, whereas the standard HTL-less SnPb reference exhibits severe operational degradation within the same timeframe. These findings highlight germanium doping in precursor inks as an effective pathway to suppress charge recombination and unlock efficient, durable HTL-free SnPb perovskite architecture for practical single and tandem photovoltaic systems.
