Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
Cu2O, a p-type semiconductor, is a promising alternative to conventional organic hole transport layers in perovskite solar cells (PSCs). However, the perovskite layer atop of Cu2O suffers from degradation associated with the migration of Cu⁺ species into the perovskite lattice, leading to structural distortion and the formation of CuI and PbI2. X-ray photoelectron spectroscopy (XPS) analysis confirms that the degradation originates exclusively from Cu⁺ ions, as it is detected on the surface of the perovskite layer. To suppress this degradation pathway, poly(acrylonitrile-co-methyl acrylate) (PAM) is employed to passivate grain boundaries, which act as channels for Cu⁺ ion infiltration. This grain boundary passivation effectively stabilizes the perovskite structure, as evidenced by the diminished intensity of the PbI2 diffraction peak in X-ray diffraction (XRD) analysis. In addition, interface passivation between the Cu2O and perovskite layers is investigated using benzotriazole (BTA), and the underlying chemical interactions that enhance interfacial stability are elucidated. The PSCs fabricated without interfacial and grain-boundary passivation exhibited a decline in photovoltaic parameters, with a power conversion efficiency (PCE) of approximately 4.7%; after modification, PCE improved to 14.4%.
The National Centre for Photovoltaic Research and Education (NCPRE), India, is acknowledged for the financial support through the grant RD/0122-MNRE000-001. The Tandem scale-up project is also acknowledged for the financial support through the grant RD/0124-MNRE000-001.
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