Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
Surface treatments are crucial in semiconductor device fabrication as surface and interface defects can strongly influence device performance [1]. Laser-based treatments offer spatially selective heating and have been explored as alternatives to conventional thermal processing [2]. Here, we investigate laser treatment of two material systems: single-crystal SnS₂ and polycrystalline CdTe/CdS junctions. The SnS₂ crystals were treated with a continuous-wave (CW), 450 nm flat-beam diode laser, while CdTe device stacks in a glass/TCO/CdS/CdTe superstrate configuration were treated with a CW Nd laser operating at 1064 nm.
We evaluated the samples before and after treatment using surface photovoltage spectroscopy (SPS). This contactless, nondestructive technique probes illumination-induced changes in band bending at semiconductor surfaces and buried interfaces [3]. In both untreated systems, the SPV spectra exhibited a dip just below the band-edge transition, consistent with a contribution from defect states. This feature was absent after laser treatment, and corresponding changes were observed in the phase spectra. The apparent band-edge feature in the SPV spectra also shifted to higher photon energy in both systems.
These results indicate that laser treatment modifies the electronic response of both SnS₂ and CdTe/CdS, with the suppression of the sub-band-edge feature consistent with reduced defect-related response. They also demonstrate the usefulness of SPS for examining laser-induced changes in semiconductor materials and junctions.
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