Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
Many of the macroscopic properties of perovskite devices are determined by their microstructure, i.e. the presence/properties of individual grain boundaries, halide phase segregation, crystal grain orientation, the presence of point/extended defects, or the millimetre-scale coverage of a charge transport layer, to name a few. Similarly, many device-relevant perovskite films are only a few hundred nanometres thick, meaning that high-quality microscopy is essential to understand and improve the basic properties of perovskite films and devices.
Due to the small length scales in perovskite films, however, microscopy techniques based on visible light are often unable to resolve relevant features, and other types of microscopies, like (scanning) transmission electron microscopy (STEM) and analytical atomic force microscopy (AFM) are needed. STEM is a powerful tool for resolving the atomic structure of crystalline materials, but the large energies involved can easily degrade the materials being studied, especially the unstable hybrid perovskites. Analytical AFM can provide nanometre-resolution measurements of surface morphology, conductivity, and surface potential, among others, but the long exposure times involved often impact the measurements if they are done in air.
In this talk, I will show how to use STEM to study the atomic properties of thermally evaporated hybrid perovskite films with minimal beam damage, which allows us to identify various important crystallographic properties.[1,2] For example, the presence of atomically coherent epitaxial interfaces between fully evaporated 2D/3D perovskites, and how 2D perovskites tend to grow selectively on areas of 3D perovskite with a high density of ordered defects.
Finally, I will show how highly localised IV-curves can be obtained using conductive AFM, which enables the study of phase segregation and its inhibition with nanometre resolution, using a technique which can be generalised to study any IV-related property of a device under various operating conditions.[3]
