Defects, Interfaces, and Charge Extraction in Sn-Based Perovskite Nanocrystals and Solar Cells
QING SHEN a
a The University of Elecro-Communications
Invited Speaker Session, QING SHEN, presentation 056
Publication date: 22nd October 2026

Sn-based perovskites are attracting increasing attention as promising lead-free semiconductors for next-generation optoelectronic and photovoltaic applications. However, their performance and stability are still strongly limited by defect formation, oxidation of Sn(II) to Sn(IV), self-doping, and severe nonradiative carrier losses.

We have investigated defect control and charge-carrier dynamics in perovskite nanocrystals (PNCs), including Pb-, Sn–Pb-, and Sn-based systems [1–8]. Compositional engineering, metal doping, and control of Sn(IV)-related defects effectively suppress structural distortion and nonradiative recombination [5–8]. In particular, suppression of Sn(IV) formation enabled phase-stable Sn- and Sn–Pb-based PNCs with significantly improved optical properties and ultralong carrier lifetimes, providing new insight into the relationship between defect chemistry and carrier dynamics [7,8].

For Sn-based perovskite solar cells, whose power conversion efficiencies have exceeded 15% [9], we have further focused on the roles of interfacial defects in carrier recombination, transport, and extraction. Time-resolved photoluminescence measurements revealed pronounced carrier losses at the perovskite/electron-transport-layer interface, indicating that this interface is a major source of nonradiative recombination. Interfacial passivation effectively suppresses these losses, prolongs carrier lifetimes, and improves the open-circuit voltage.

More recently, using bias-modulated electrical transient measurements, we identified an extraction-limited charge-loss mechanism that is prominent in Sn-based solar cells but much less evident in high-efficiency Pb-based counterparts. Under high forward bias, interfacial defects and associated self-doping screen the internal electric field and hinder the extraction of low-mobility carriers. The resulting carrier accumulation enhances nonradiative recombination, thereby reducing both the open-circuit voltage and fill factor. These findings indicate that charge extraction, in addition to defect-mediated recombination, is a critical factor limiting the performance of Sn-based perovskite solar cells.

In this talk, I will discuss our recent progress in understanding and engineering defects, interfaces, and charge-extraction dynamics in Sn-based perovskite nanocrystals and solar cells, and highlight strategies toward more efficient and stable lead-free perovskite photovoltaics.

This research was the Japan Science and Technology Agency (JST) Mirai program JPMJMI22E2) and MEXT KAKENHI Grant (24K01295, 26286013).

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