Deposition-Pathway-Controlled Phase Formation, Orientation, and Charge Transport in Thermally Evaporated FASnI3 Thin Films
Wantae Park a, Wonryeol Yang a, Youjin Reo a, Soohwan Yoo a, Sungjae Cho a, Hyesun Kim b, Sunmin Ryu b, Yong-Young Noh a
a Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
b Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
Poster, Wantae Park, 061
Publication date: 22nd October 2026

Controlling crystallization in vapor-deposited tin halide perovskites is critical to their optical and electronic properties.[1],[2] In this work, additive-free formamidinium tin triiodide (FASnI3) thin films were prepared by thermal evaporation using co-deposition and sequential deposition to determine how deposition pathway and precursor stoichiometry govern conversion, morphology, orientation, optical properties, and charge transport. The high diffusivity of formamidinium iodide into SnI2 enabled FASnI3 formation during both processes, while subsequent annealing improved morphology and crystallinity. Nevertheless, the two routes produced distinct films. At an optimized precursor ratio, co-deposition achieved complete conversion, smooth and uniform surfaces with enlarged grains, and preferential substrate-parallel (n00) orientation. In contrast, sequential deposition left residual SnI2 even under FAI-rich conditions and promoted (111)-oriented growth with parallel and tilted crystallites. Both films exhibited characteristic FASnI3 absorption and photoluminescence responses near 860 and 850 nm, respectively, whereas residual SnI2 absorption appeared only in sequentially deposited films. These structural differences were reflected in lateral charge transport. Co-deposited thin-film transistors exhibited a field-effect mobility of 13.6 cm2 V−1 s−1, compared with 2.18 cm2 V−1 s−1 for sequentially deposited devices, while maintaining reliable switching without hole-suppressing additives. These results identify deposition pathway and precursor stoichiometry as key parameters for tailoring vacuum-deposited FASnI3 thin films for optoelectronic applications.

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT)  (RS-2026-25549877, NRF-2021R1A2C3005401),and the BK21 FOUR Program funded by the Ministry of Education. This research was also supported by the Samsung Display Corporation.

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