Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
Spatial atomic layer deposition (S-ALD) offers a promising approach for scalable fabrication of metal oxide electron transport layers (ETLs) in perovskite solar cells (PSCs). This study investigates the deposition characteristics of S-ALD SnOₓ and evaluates its photovoltaic performance and integration with transparent grid electrodes (TGEs).
The effects of substrate moving speed, gas flow conditions, manifold gap, and deposition temperature on SnOₓ film growth were systematically investigated. A maximum growth per cycle (GPC) of 0.134 nm/cycle was achieved at 100 °C. PSCs employing S-ALD SnOₓ deposited at 150 °C achieved a power conversion efficiency (PCE) of 17.92%, approaching the 19.01% obtained using spin-coated SnO₂ nanoparticle ETLs. Ultraviolet photoelectron spectroscopy (UPS) revealed differences in the electronic energy levels of the two ETLs, while photoluminescence (PL) measurements showed blueshifts of 16.1–25.8 nm despite negligible changes in the perovskite optical bandgap (≤0.005 eV). These findings suggest that interfacial electronic properties may contribute to the observed photovoltaic performance differences.
Furthermore, S-ALD SnOₓ was integrated with Cu-based TGEs, achieving a maximum PCE of 6.74%. Morphological and elemental analyses revealed localized protrusions and overlapping Cu and I distributions, highlighting challenges associated with film coverage and interfacial stability on nonplanar electrodes.
Overall, this work demonstrates the potential of S-ALD SnOₓ as an ETL for PSCs and provides insights into process optimization, interfacial properties, and integration with structured transparent electrodes.
Keywords: Perovskite solar cells, Spatial atomic layer deposition, Oxide electron transport layers, Transparent grid electrodes
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