Patterned Al₂O₃ Insulating Passivation Based on Lithography and Dry Etching
Hye-Seon Park a
a Department of Semiconductor Materials, Devices and Processes, Pusan National University, Busan, Republic of Korea
Poster, Hye-Seon Park, 095
Publication date: 22nd October 2026

p-i-n perovskite solar cells (PSCs) are attractive for their stability and tandem applications, but nonradiative recombination at the hole transport layer (HTL)/perovskite interface limits the open-circuit voltage (Voc). Inserting a thin insulating passivation layer reduces this recombination; however, because carriers must tunnel through it, a slight increase in its thickness sharply reduces the fill factor (FF), causing a Voc–FF trade-off. A porous insulator contact, a thick (tens to a hundred nanometers) insulating layer with nanoscale openings, has been proposed to overcome this trade-off, as carriers reach the HTL laterally through the openings rather than by tunneling [1]. However, its solution process based on nanoplates produces random openings whose dimensions are difficult to control.

In this study, we fabricate a patterned insulating passivation layer with precisely controlled insulator width (d), opening space (s), and thickness (h) using lithography and dry etching. An Al₂O₃ layer with h of tens to a hundred nanometers, thick enough to block carrier tunneling, is deposited on a NiOx HTL and patterned through a periodic dot-array photoresist mask. d is set to 200 nm, shorter than the carrier diffusion length of the perovskite, and s to 60 nm or less for a coverage ([d/(d+s)]²) of about 60% or higher. Etching conditions such as bias power and pressure are optimized for near-vertical sidewalls, and the etching time is controlled to minimize damage to the underlying NiOx.

The patterns are examined by scanning electron microscopy (SEM), the passivation effect by photoluminescence (PL), and device performance by current density–voltage (J–V) measurements as a function of coverage, in comparison with devices without the insulator and with a continuous insulating film. Precise control of d, s, and h is expected to mitigate the Voc–FF trade-off and enable a systematic analysis of the relationship between coverage and device performance.

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