Investigation of Thermal ALD-NiOₓ Hole-Transport Layers for Wide-Bandgap Perovskite Solar Cells toward Perovskite/Silicon Tandem Applications
Min-Su Cho a, Ji-Youn Seo b
a Department of Semiconductor Materials, Devices and Processes, Pusan National University, Busan, Republic of Korea
b Department of Nano Fusion Technology, Pusan National University, Busan 46241, Republic of Korea
Poster, Min-Su Cho, 096
Publication date: 22nd October 2026

In perovskite/silicon tandem solar cells, it is important to form hole-selective contacts compatible with the textured surfaces of silicon bottom cells. Spin-coated nickel oxide nanoparticle (NP-NiOₓ) films have been widely used as effective hole-transport layers (HTLs); however, on textured substrates, film coverage and local thickness distribution can vary depending on nanoparticle dispersion, substrate wettability, and coating conditions. In contrast, thermal atomic layer deposition (ALD) enables precise control over film growth and thickness through self-limiting surface reactions and offers the potential to form films with uniform thickness even on complex surface topographies. Based on these processing characteristics, this study aims to investigate the film-growth behavior of ALD-NiOₓ and its potential as an HTL.

In this study, NiOₓ thin films will be deposited by thermal ALD using Ni(dmamb)₂ as the nickel precursor and H₂O as the reactant. As an initial step toward future application in perovskite/silicon tandem solar cells, film growth will first be investigated on planar indium tin oxide (ITO) substrates, and the resulting films will be incorporated into inverted wide-bandgap single-junction perovskite solar cells with a bandgap of approximately 1.66 eV. Growth characteristics will be evaluated as a function of precursor and reactant pulse durations and purge times, while thickness evolution with ALD cycle number will be analyzed to establish reproducible deposition conditions. In addition, spectroscopic ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) will be used to assess film thickness, surface morphology, and the chemical states of Ni.

To evaluate device performance, solar cells incorporating ALD-NiOₓ and the same self-assembled monolayer (SAM) will be compared with spin-coated NP-NiOₓ/SAM reference devices. Current density–voltage (J–V) measurements will be used to analyze open-circuit voltage (V_OC), fill factor (FF), power conversion efficiency (PCE), and device-to-device performance variations, while maximum power point tracking (MPPT) will be employed to assess stabilized power output. By investigating the relationships among ALD process conditions, the physical and chemical properties of NiOₓ films, and single-junction device performance, this study aims to provide foundational insights for future application to perovskite/silicon tandem solar cells based on textured silicon substrates. 

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