Improving the Open-Circuit Voltage of Wide-Bandgap Perovskite Solar Cells for Indoor Applications
Hikaru Hongo a, Yasuaki Ishikawa a, Itaru Raifuku a
a Aoyama Gakuin University
Poster, Yasuaki Ishikawa, 115
Publication date: 22nd October 2026

As the emission spectrum of indoor lighting has a more limited wavelength range compared to sunlight, the ability to tune the bandgap of perovskite compounds is advantageous for improving power conversion efficiency (PCE) in indoor environments. Whilst the bandgap of perovskite compounds can be widened by increasing the bromide ratio at the X-site, perovskites with a wide bandgap are prone to phase segregation. Sugimoto et al. introduced chloride at the X site to suppress phase segregation in a wide-bandgap perovskite.[1] Here, we synthesized a Cs-rich chloride-containing triple-cation/triple-halide perovskite, Cs₀.₆FA₀.₃MA₀.₁Pb(I₀.₇₀Br₀.₂₅Cl₀.₀₅)₃, and confirmed that its band positions range from –3.76 to –5.58 eV. Furthermore, we fabricated a perovskite solar cell with a layered structure of ITO/SnO₂/Cs₀.₆FA₀.₃MA₀.₁Pb(I₀.₇₀Br₀.₂₅Cl₀.₀₅)₃/Spiro-OMeTAD/Au, and performed current–voltage (J-V) measurements under simulated sunlight (AM1.5G, 100 mW/cm²). The obtained data were VOC of 0.999 V, JSC of 14.0 mA/cm², FF of 0.374, and PCE of 5.19% in forward bias. It is evident from these results that the VOC is lower than that of typical wide-bandgap perovskites. [2,3] This reduction is considered to be caused by increased charge recombination resulting from mismatches in the energy-level alignment and interfacial properties between the perovskite absorber and the charge transport layers. In this study, we aimed to improve solar cell performance by optimizing the device structure through device simulations and improving interfacial properties through additive engineering. By introducing 5-AVAI as an additive, we aimed to suppress interfacial defects and charge recombination, thereby improving the open-circuit voltage (VOC), as shown in Fig. 1.

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