Pb-free Infrared Colloidal Quantum Dots for solution processed SWIR Photodetectors and Image sensors
Gerasimos Konstantatos a
a ICFO–Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
#NextGenPD - Next Generation Photo-and-radiation detectors
Barcelona, Spain, 2024 March 4th - 8th
Organizers: Ardalan Armin and Nicola Gasparini
Invited Speaker, Gerasimos Konstantatos, presentation 054
DOI: https://doi.org/10.29363/nanoge.matsus.2024.054
Publication date: 18th December 2023

Photodetectors that are sensitive in shortwave infrared (SWIR) range (1 µm - 2 µm) are of significant interest for applications in 3D, night and adverse weather imaging, machine vision, autonomous driving, among others. Currently available technologies in the SWIR rely on costly epitaxial semiconductors that are not monolithically integrated with CMOS electronics. Solution-processed quantum dots have been developed to address this challenge enabling low-cost manufacturing and facile monolithic integration on silicon in a back-end-of-line (BEOL) process. To date, colloidal quantum dot (CQD) materials to access the SWIR have been based on lead sulfide (PbS) and mercury telluride (HgTe) compounds imposing major regulatory concerns and potentially impeding their deployment in consumer electronics. In this talk I will present a novel synthetic method of environmentally friendly silver telluride quantum dots and their application in high-performance SWIR photodetectors. The CQD photodetector stack is entirely based on Restriction of Hazardous Substance (RoHS) compliant materials and exhibits a spectral range from 350 nm - 1600 nm, with room-temperature detectivity of the order 1012 Jones, 3dB bandwidth in excess of 100 KHz and linear dynamic range of over 118 dB. We further demonstrate, for the first time, a monolithically integrated SWIR imager that is based on solution processed, heavy-metal-free materials, paving the way of this technology to consumer electronics market [1]. In the second part of the talk I will turn to our recent activities on the development of III-V CQDs and their applicaiton in photodetectors aiming for speeds suited for gated imaging. I will dicuss the challenges on the synthesis of InSb CQDs in terms of surface passivation and environmental stability and present our approach to overcome those challenges reporting InSb CQD SWIR photodetector that exhibits external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, fast photoresponse time of 70 ns, and specific detectivity of 3.6 × 1012 Jones.

[1] Silver Telluride Colloidal Quantum Dot Infrared Photodetectors and Image Sensors, Yongjie Wang1, Lucheng Peng1, Julien Schreier2, Yu Bi2, Andres Black2, Aditya Malla1, Stijn Goosens2, Gerasimos Konstantatos1,3*, Nature Photonics, accepted.

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