Tuning Charge-Transfer States by Interface Electric Fields
Jakob Wolansky a, Anton Kirch a b, Shayan Miri Aabi Soflaa a, Axel Fischer a, Johannes Benduhn a, Ludvig Edman b, Karl Leo a, Sebastian Reineke a
a Integrated Center for Applied Physics and Photonics Materials, TU Dresden, Germany
b The Organic Photonics and Electronics Group, Department of Physics, Umeå University, Sweden
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
#OPHYM - Optical characterization of hybrid photovoltaic materials
Barcelona, Spain, 2024 March 4th - 8th
Organizers: Jafar Khan and Safa Shoaee
Oral, Jakob Wolansky, presentation 173
DOI: https://doi.org/10.29363/nanoge.matsus.2024.173
Publication date: 18th December 2023

In organic solar cells, the charge-transfer (CT) electronic states are crucial in the charge-generation process, significantly influencing the overall device performance. They are formed at the interface between the electron-donor (D) and electron-acceptor (A) material, which usually exhibit significant electric fields.

In this study, we use a dedicated D-A system to tune intrinsic and extrinsic interface electric fields. It consists of two doped organic layers on top of each other, forming a planar organic p-n junction. By applying increasing voltages up to 6 V and introducing different thicknesses of intrinsic layers between 0 nm and 20 nm at the interface, the electric field at the interface can be deliberately varied. We observe substantial shifts in the CT-state peak emission, approximately 0.5 eV (150 nm), causing a transition from red to green color. This effect can be explained in a classical electrostatic picture, as the interface electric field superimposes the Coulomb interaction between the electron-hole pair. Our investigations illustrate the extent to which CT-state energies are influenced by their immediate electric environment. While CT state energy is often referred to as a fixed quantity, we want to emphasize that this understanding needs to be revised, especially for planar systems with a high degree of interfacial dipole alignment.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info