Visible-Blind Quantum Dot Downconverters for UV-Enhanced Si CMOS Sensors and UV-Band Discriminator
Avijit Saha a d, Gaurav Kumar a, Santanu Pradhan a, Gauttam Dash c, Ranjani Viswanatha c, Gerasimos Konstantatos a b
a ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Spain
b ICREA (Institució Catalana de Recerca i Estudis Avançats), 08010 Barcelona, Spain
c JNCASR Jawaharlal Nerhu Centre for Advanced Scientific Research, Jakkur, BENGALURU, India
d Physical Chemistry, TU Dresden, Zellescher Weg 19, 01069 Dresden, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
#NextGenPD - Next Generation Photo-and-radiation detectors
Barcelona, Spain, 2024 March 4th - 8th
Organizers: Ardalan Armin and Nicola Gasparini
Oral, Avijit Saha, presentation 420
DOI: https://doi.org/10.29363/nanoge.matsus.2024.420
Publication date: 18th December 2023

The ultraviolet (UV) part of spectrum is of paramount importance for a large range of applications from health and safety to process and environmental monitoring. Yet the complexity of integrating UV sensitive optoelectronics on standard complementary metal–oxide–semiconductor (CMOS) technology has curtailed to a large extent the use of UV spectrum, especially in consumer electronics. Currently UV photodetectors rely on III-V nitride semiconductors that are not monolithic to silicon and are typically fabricated off-die.

    We overcome this challenge by developing RoHS compliant environmentally friendly colloidal quantum dots (QDs) (zinc magnesium oxide , ZnMgO) which has compositionally tunable absorption across UV and high photoluminescence quantum yield (> 90%) in the visible.[1] Herein, we will present a non-toxic, visible blind QD based down-converting thin-film technology that expands the spectral coverage of Si-CMOS-sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and NIR. A Si-photodetector (PD) integrated with the QDs results in a record 9-fold improvement (800% relative enhancement) in photoresponsivity from 0.83 to 7.5 mA W−1 at 260 nm. Leveraging the tunability of these QDs, we will show a simple UV-band identification scheme (a sensor), which uses two distinct-bandgap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light (different UV bands) using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics.

AS acknowledge financial support from the Marie Skłodowska-Curie Actions to attend the conference.The authors acknowledge financial support from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (grant agreement no. 725165), the Spanish Ministry of Economy and Competitiveness (MINECO) and the “Fondo Europeo de Desarrollo Regional” (FEDER) through grant TEC2017- 88655-R. The authors also acknowledge financial support from Fundacio Privada Cellex, the program CERCA and from the Spanish Ministry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0522). 
 

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