Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.450
Publication date: 18th December 2023
Metal halide perovskites have achieved impressive energy conversion efficiencies (PCEs)in both single junction and tandem solar cells. However, a key challenge for their practical applications lies in the lower stability of the devices, which is determined not only by the perovskite materials but also by the charge transport layers. Currently, all high-performance perovskite solar cells (PSCs) with > 24% PCE are based on the bench-mark hole transport layer Spiro-OMeTAD, which is doped with lithium bis(trifluoromethane)sulfonimide (LiTFSI) and 4-tert-butylpyridine (tBP), which has a negative impact on the stability of the devices. Moreover, due to the complex in situ oxidation processes, it is difficult to understand the mechanism of conventional spiro-OMeTAD doping, which further limits the development of stable HTLs with high PCEs.
We have developed a clean and free post-oxidation doping for spiro-OMeTAD by using stable organic radicals as the dopant and ionic salts as the dopant modulator (termed ion-modulated (IM) radical doping).1 The doped Spiro-OMeTAD based on our IM radical doping strategy provided high PCE of over 25% and excellent stability (T80 for ~ 1200 h under 70±5% relative humidity and T80 for ~ 800 h under 70±3 °C without encapsulation), minimizing the trade-off between efficiency and stability of PSCs. In this doping strategy, the radicals provide hole polarons that immediately increase the conductivity and work function, and the ionic salts further modulate the work function by affecting the energetics of the hole polarons. The IM radical doping strategy provides a simple and effective approach to separately optimize the conductivity and WF of organic semiconductors for a variety of optoelectronic applications.
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