Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.460
Publication date: 18th December 2023
Formamidinium lead iodide (FAPbI3) has gained considerable interest as a promising photoactive layer for optoelectronic devices due to its broad spectrum of light absorption and increased thermal stability when compared to its conventional methylammonium counterpart (MAPbI3). Recent developments in substituting formamidinium (FA) with smaller Cs cations have further accelerated its growth in the photovoltaic (PV) community by enhancing phase stability and power conversion efficiency (PCE). However, only a few studies have been reported on perovskite photodetectors (PPDs). Here, we investigate the influence of Cs incorporation on PD performance in the CsXFA1-XPbI3 system (X = 0–0.25). We demonstrate that A-site substitution with Cs reduces microstrain within the crystal lattice and promotes the formation of a compact, well-ordered surface with improved morphology. To evaluate the performance of the CsXFA1-XPbI3 system, we have prepared p-i-n photodiode-type PDs using a one-step spin-coating method. We find that the lattice strain relaxation considerably reduces the Jd in the device, which may be partially due to the reduction in lattice strain which reduces trap density and improves charge transport. Particularly, the lowest Jd value of 3.3x10-9 A cm-2 is achieved for Cs0.05FA0.95PbI3 at -0.5 V, which also greatly contributes to its highest specific detectivity of 6.1x1011 A Hz-1/2 and widest linear dynamic range of 135 dB. Furthermore, when this mixed-cation perovskite material is integrated into a device, long-term stability without sacrificing performance is observed, which holds great promise for future optoelectronics applications.
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