Unified Modelling of Organic Electrochemical Transistors and Inorganic Electrochemical RAM

Nir Tessler^a, Sapir Bitton^a

^aSara and Moshe Zisapel Nano-electronic Center, Electrical and Computer Electronics, Technion Israel Institute of Technology, Haifa, Israel

Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)

#OPTMS - Organic and perovskite-based transistor memoristors and synapses

Barcelona, Spain, 2024 March 4th - 8th

Organizers: Jung-Yao Chen, Chu-Chen Chueh and Wen-Ya Lee

Oral, Nir Tessler, presentation 469
DOI: https://doi.org/10.29363/nanoge.matsus.2024.469
Publication date: 18th December 2023

Electrochemical random access memory (ECRAM) and organic electrochemical transistors (OECT) are gaining significant attention due to the unique properties introduced via the mobile ions. Despite the progress in device fabrication, there is very little in terms of device models.[1, 2] Here, we will describe results obtained using a 2D semiconductor device model that incorporates ions and reactions in a self-consistent manner.

For example, although OECTs electrolytes contain both cations and anions, it is common to consider only the primary ion (as a cation in a normally-off p-type transistor). We simulate normally-on and normally-off transistors showing that the normally-on is highly affected by the counter ions (anions) and field-screening at the contacts.

Inorganic ECRAM transistor devices have a structure similar to OECT, where the memory (ion retention) is provided by the diffusion's very high electric field activation. Comparing measured multi-level potentiation [3] to detailed device simulation, we reveal the role of electrolyte polarisation. We also show that sublinear potentiation response can be explained by an electrochemical reaction similar to that of lithium plating in batteries. Namely, electrochemical reactions must be considered when dealing with electrochemical devices.

References:

[1] [1] P. R. Paudel, M. Skowrons, D. Dahal, R. K. Radha Krishnan, and B. Lüssem, "The Transient Response of Organic Electrochemical Transistors," Advanced Theory and Simulations, vol. 5, no. 5, p. 2100563, 2022.

[2] N. Tessler, N. Kim, H. Kang, and J. Woo, "Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating," Journal of Applied Physics, vol. 134, no. 7, 2023.

[3] H. Kang, H. W. Kim, E. R. Hong, and J. Woo, "Analog synaptic behavior of mobile ion source-limited electrochemical RAM using CuOx oxide electrode for deep learning accelerator," Applied Physics Letters, vol. 120, no. 12, p. 122101, 2022.

Acknowledgements:

This research was supported by the Ministry of Innovation, Science and Technology Israel, the M-ERANET grant PHANTASTIC Call 2021. Sapir Bitton is a fellow of the Ariane de Rothschild Women’s Doctoral Program.

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