Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
Publication date: 18th December 2023
Sensors in the short-wave infrared (SWIR: 1-1.7 µm) range have attracted high attention due to the increasing need for 3D imaging and facial recognition technologies. The inherent transparency of silicon above 1 µm wavelength and the complex integration processes of III-V materials limits standard technologies to address this spectral region. In this context, it has become necessary to investigate alternative photodetector materials. Among the candidates for SWIR sensing, lead sulphide quantum dots (PbS QD) are very promising candidates for the integration as active material due to their strong absorption, tuneable with size, at targeted infrared wavelengths. However, above specific nanocrystal size, they are prone to surface oxidation and aggregation limiting their performances and integration in sensor devices. [1] In the literature, among several strategies developed to passivate these QDs and deposit them as thin layer, one of the most promising is to combine them with halogenated perovskites. [2]
Motivated by this approach, we have investigated and optimized all the steps, from the synthesis of the PbS QD to their integration in the perovskite matrix. An efficient solution exchange of long-chain ligands on the surface of QDs with perovskite precursors is performed and confirmed by FTIR and XPS measurements. The relevance of this perovskite shell around the QD is explored optically (PL, Abs spectroscopy). A stable ink based on the ligand-exchanged QDs and perovskite precursors was then developed. The optimized inks are stable for days in suitable solvents for film deposition. A one-step solution-processed PbS QD and perovskite (MAPbI3) strategy was developed to fabricate thin films absorbing in the desired IR spectral region and demonstrating signatures of both constituents.
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