Publication date: 21st July 2025
Topological materials have emerged as promising candidates for future spintronics, quantum computing, low-power electronics, and optoelectronic applications due to their robust, symmetry-protected edge or surface states that are immune to backscattering and disorder. Extending this concept, higher-order topological insulators (HOTIs) host quantum states that are localized on hinges or corners, offering new functionalities for nanoscale device applications.
In this work, we present first-principles predictions of HOTI phases across two families of quantum materials. Firstly, we identify Li-intercalated graphene compounds that exhibit coexisting electronic and phononic topological features. The HOTI phases in these materials are protected by C6 rotation and inversion symmetries, as confirmed by their calculated topological invariants (
Secondly, we examine a family of antiperovskite compounds such as Y3InC, which host symmetry-protected triple-point phase without SOC and a twin Dirac node phase when SOC is included. These systems exhibit higher-order topological hinge states coexisting with gapless bulk Dirac phases, making them rare and valuable candidates for multifunctional device applications. Together, these findings unveil a rich landscape for higher-order topological phases in structurally and chemically diverse material systems, opening new avenues for their integration in future spintronics, quantum computing, low-power electronics, and optoelectronic applications.
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