Perovskite nanocrystals for bright and stable PELEDs and LED arrays
sarika kumari a
a Institute of Advanced Materials (INAM), Universitat Jaume I (UJI), Castellón de la Plana, 12006, Spain
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
A4 Fundamental understanding of halide perovskite materials and devices - #PeroFun
València, Spain, 2025 October 20th - 24th
Organizers: Krishanu Dey, Iván Mora-Seró and Yana Vaynzof
Oral, sarika kumari, presentation 298
Publication date: 21st July 2025

Perovskite nanocrystals for bright and stable PeLEDs and LED arrays

Sarika Kumari,1  Rafael S. Sánchez,1 and Iván Mora-Seró1, *

1 Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.

Corresponding authors: (rasanche@uji.es, sero@uji.es)

Perovskite materials have been exploited for their applications in light emitting devices for several years since their first application in 20141. All inorganic PeNCs have been considered suitable materials for the light emitting diodes because of their properties like high colour purity, high PLQY, high carrier mobility and direct bandgap. High brightness is achieved by these colloidal Perovskite nanocrystals. We have aimed to fabricate the PeLEDs array for writing different characters by using the different PeLEDs pixels on the substrate. The PeLEDs were fabricated with high brightness up to 96,720 cd/m2, T50 of 90 min with 23 % EQE. In this work, we have used our already established synthesis protocol of high purity CsPbBr3 NCs and the device fabrication process with architecture of ITO/PEDOT: PSS/Poly-TPD/CsPbBr3 NCs/POT2T (40 nm) /LiF (1.0 nm)/Al (100 nm) is described in this report2. 

The LED array devices containing 64 pixels by using the substrates of the area of 25 mm*25 mm as shown in Fig 1. In this stage, we have encountered the problem of turning up of the random pixels when trying to turn on one pixel which means that the device pixels were uncontrollable.

SCIC facilities of INAM-UJI.

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