Substrate effects in thermally evaporated mixed halide FAPbI1Br2 perovskite films
Selina Olthof a
a Chair of Material and Surface Analysis, University Wuppertal, Rainer Gruenter Str 21, 42119 Wuppertal, Germany
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
A5 Advances in Vacuum and Hybrid Deposition of Halide Perovskite - #PeroVac
València, Spain, 2025 October 20th - 24th
Organizers: Annalisa Bruno, Monica Morales Masis and Kassio Zanoni
Invited Speaker, Selina Olthof, presentation 433
Publication date: 21st July 2025

We systematically investigated the influence of various substrates, such as PTAA, NiOx, PEDOT:PSS and the self-assembled monolayer MeO-2PACz, on the formation of thermally evaporated FAPbI1Br2 perovskite films. Characterization techniques including X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM) were utilized to analyze the surface properties and the morphology of the evaporated films. Bulk properties, like crystal structures and optical absorption characteristics of the films, are investigated using X-ray diffraction (XRD) and UV-vis spectroscopy.

Our results reveal distinct substrate-dependent effects on the formation and composition of resulting perovskite thin films. While on PTAA the mixed halide perovskite readily forms, on PEDOT:PSS and NiOx we initially only observe FAPbI3 formation – indicating that a bromide species must become volatile. Only after the deposition of ~30 nm of the perovskite precursors the substrate influence diminishes and bromide becomes incorporated forming the desired FAPbI1Br2. Maybe the most surprising results were obtained for the MeO-2PACz substrates, which are commonly (and successfully) employed in solution processed perovskite devices. Here, no bromide incorporation was seen for any layer thickness up to 200 nm deposition and overall the perovskite formation was hindered. This indicates that SAM layers might present a challenge in thermal evaporation and that substrates can affect the film growth not only close to the interface, but also extending to device-relevant thicknesses.

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