Publication date: 22nd July 2026
Tin (Sn)-based halide perovskites have garnered significant attention as promising lead-free alternatives for p-type channels in thin-film transistors (TFTs). However, compared to their lead (Pb) counterparts, they still suffer from poor electrical properties due to intrinsic defect states and limited crystallinity. While conventional electronic doping via substitutional impurities is a powerful tool in sillicon (Si)-based semiconductors, replicating this systematic approach in perovskites is highly challenging due to the strong charge-compensating behaviors of intrinsic defects. Although organic modification offers a potential pathway for electronic tunability, the precise interfacial interactions between organic moieties and perovskites remain largely unexplored.
To address this challenge and establish a reproducible doping framework, we report a robust surface p-doping strategy by introducing a thiophene-containing polymer onto quasi-two-dimensional (2D) tin perovskites. The Sn ions in the perovskite framework effectively interact with the sulfur atoms in the thiophene moieties at the organic–inorganic interface. This targeted interaction induces efficient hole generation, effectively modulating the electronic structure and charge carrier density while overcoming the intrinsic transport bottlenecks of quasi-2D multiple quantum wells. Consequently, the doped quasi-2D tin perovskite transistors exhibit a remarkable field-effect mobility of 53.57 cm2 V-1 s-1, representing a nearly 7.5-fold increase over the 7.16 cm2 V-1 s-1 observed in the undoped control device. Additionally, the devices achieve an outstanding on/off current ratio exceeding 107 and superior operational stability. These findings demonstrate that tailored interfacial molecular chemistry provides an effective, experimentally validated route to achieving stable, high-mobility, and lead-free perovskite electronics.
J.-H.K. would like to thank the Heeger Center for Advanced Materials (HCAM) at the Gwangju Institute of Science and Technology (GIST) for assisting with device fabrication and analysis. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2020R1A2C3003653, RS-2024-00333515); by the Technology Development Program to Solve Climate Change of the NRF funded by MSIT (NRF-2020M1A2A2080748); and by the GIST Research Institute (GRI, APRI) via a grant funded by the GIST in 2024.
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