From Degradation to Functionality: Metal Transport in Halide Perovskites

Barry Rand^a^,^b

^aDepartment of Electrical and Computer Engineering, Princeton University, Princeton, NJ 08544, United States

^bAndlinger Center for Energy and the Environment, Princeton University, Princeton, NJ 08544, United States

Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)

A1 Beyond Efficiency: Perovskite Optoelectronics for Scalable and Stable Devices

Palma, Spain, 2026 October 26th - 30th

Organizers: Guixiang Li and Silver-Hamill Turren-Cruz

Invited Speaker, Barry Rand, presentation 043
Publication date: 22nd July 2026

Metal halide perovskites are often viewed as electronically defect tolerant semiconductors. At the same time, their mixed ionic-electronic character and chemical reactivity can drive unexpected degradation pathways involving electrode materials. In particular, noble metals commonly employed as device contacts are not always chemically inert and can participate in electrochemical reactions that lead to metal transport through perovskite layers. In this talk, I will discuss how studies of gold migration in perovskite devices have led to a broader understanding of metal transport and doping in halide perovskites. I will describe how electrochemically generated noble-metal cations can form, migrate, and interact with the perovskite lattice, influencing both device stability and electronic properties. These findings suggest that metal transport should not be viewed solely as a degradation mechanism, but also as a potential route to dynamic doping and new device functionality. Finally, I will explore whether the electrochemical processes that limit long-term stability of perovskite optoelectronic devices be harnessed as useful functionality? Examples including dynamic doping and resistive switching suggest that the boundary between degradation and operation may be less distinct than traditionally assumed. Understanding this relationship may prove important both for realizing durable perovskite technologies and for developing new classes of adaptive electronic devices.

References:

[1] “Electrolytic gold plating, stripping, and ion transport dynamics through a solid-state iodide perovskite,” T. Hu, R.A. Kerner, A. Singh, Y. Ren, A.V. Cohen, A. Kahn, L. Kronik, Q. Xia, B.P. Rand, Energy Environ. Sci., 18, 10483 (2025).

[2] “Beyond ion migration in metal halide perovskites: Toward a broader photoelectrochemistry perspective,” Z. Xu, R.A. Kerner, L. Kronik, B.P. Rand, ACS Energy Lett., 9, 4645 (2024).

[3] “Reverse-bias resilience of monolithic perovskite/silicon tandem solar cells,” Z. Xu, H. Bristow, M. Babics, B. Vishal, E. Aydin, R. Azmi, E. Ugur, B.K. Yildirim, J. Liu, R.A. Kerner, S. De Wolf, B.P. Rand, Joule, 7, 1992 (2023).

[4] “Electrochemical doping of halide perovskites by noble metal interstitial cations,” R.A. Kerner, A.V. Cohen, Z. Xu, A.R. Kirmani, S.Y. Park, S.P. Harvey, J.P. Murphy, R.C. Cawthorn, N.C. Giebink, J.M. Luther, K. Zhu, J.J. Berry, L. Kronik, B.P. Rand, Adv. Mater., 35, 2302206 (2023).

[5] “Halogen redox shuttle explains voltage-induced halide redistribution in mixed-halide perovskite devices,” Z. Xu, R.A. Kerner, S.P. Harvey, K. Zhu, J.J. Berry, B.P. Rand, ACS Energy Lett., 8, 513 (2023).

[6] “Low threshold voltages electrochemically drive gold migration in halide perovskite devices,” R.A. Kerner, L. Zhao, S.P. Harvey, J.J. Berry, J. Schwartz, B.P. Rand, ACS Energy Lett., 5, 3352 (2020).

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