Towards first-principles modeling of OPV devices using random structure searching and machine learning
Daniel Packwood a
a Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Nishikyo-ku, Kyoto 615-8510
Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)
D3 Next-Generation Processing Strategies for Emerging Semiconductor Technologies
Palma, Spain, 2026 October 26th - 30th
Organizers: Martyn Mclachlan and Julianna Panidi
Invited Speaker, Daniel Packwood, presentation 082
Publication date: 22nd July 2026

Optimizing organic photovoltaic (OPV) devices requires an accurate, multiscale understanding of exciton transport. However, modeling these processes from first principles introduces severe computational difficulties. In this presentation, I will outline our on-going efforts to overcome these difficulties by combining density functional theory, ab initio structure prediction, and machine learning models. 

We first discuss our efforts to model the surface of the coordination polymer copper thiocyanate (CuSCN), a wide-bandgap semiconductor often used as a hole-transporting layer in OPV devices. Finite slab models of CuSCN surfaces often suffer from artificial dipole moments, causing unphysical band energy drifts and bandgap closure (Figure). We introduce a novel passivation scheme utilizing "pseudohydrogen" atoms via the virtual crystal approximation (VCA) to counteract internal electric fields. While this VCA approach restores the bandgap, it induces an incorrect n-type behavior. By performing a comprehensive ab initio structure search, we demonstrate that surface reconstructions of CuSCN(001) offer a self-passivation mechanism that minimizes surface energy, reduces internal fields, and correctly reproduces experimental p-type semiconducting behavior. These results strongly support the use of reconstructed CuSCN surface slabs when modeling CuSCN-based OPV devices. 

We then discuss efforts to simulate exciton transport organic semiconductors, where calculating intermolecular couplings and other exciton transport parameters from first principles is excessively cost-prohibitive. We present a graph neural network (GNN) architecture that dramatically accelerates prediction times without sacrificing the accuracy needed for exciton transport simulations. Importantly, our GNN generalized across diverse molecular systems by utilizing atomic transition charges as an intermediate representation. This GNN successfully predicts exciton couplings for a broad class of fused-ring electron acceptors, enabling robust exciton diffusion simulations without repeated quantum chemical calculations [1], [2], [3]. 

Kyoto University On-Site Laboratory Initiative; JSPS Bilateral Program/NZ Catalyst Grant for Joint Research Projects (Grant Nos. JPJSBP120231003 and 22-VUW-014-JSP); JSPS Postdoctoral Fellowship; East Asia Science and Innovation Area Joint Research Program (e-ASIA JRP Grant No. JPMJSC24E3, RSCHTRUSTVIC2449).

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