Toward 3D Optoelectronics: Monolithic Integration of Vertically Stacked Perovskite Color Imagers

Xuqi Liu^a, Sergey Tsarev^a^,^b, Erfu Wu^a^,^c, Quang Lung^a, Matthias Klimpel^a^,^b, Stefanie Frick^d, Lorenzo Ferraresi^a^,^c, Bekir Türedi^a^,^b, Ioanna Vareli^b, Chenjian Lin^e, Fan Fu^b, Letian Dou^e, Sebastian Siol^d, Ivan Shorubalko^c, Sergii Yakunin^a^,^b, Maksym Kovalenko^a^,^b

^aLaboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland

^bLaboratory for Thin Films and Photovoltaics, Empa – Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland

^cTransport at Nanoscale Interfaces Laboratory, Empa – Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland

^dLaboratory for Surface Science and Coating Technologies, Empa – Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland

^eDepartment of Chemistry, Emory University, Atlanta, GA, USA

Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)

D3 Next-Generation Processing Strategies for Emerging Semiconductor Technologies

Palma, Spain, 2026 October 26th - 30th

Organizers: Martyn Mclachlan and Julianna Panidi

Oral, Xuqi Liu, presentation 101
Publication date: 22nd July 2026

Vertically stacked perovskite photodetectors enable accurate, filter-free full-color detection within a single pixel footprint, offering a promising route toward compact imaging systems.[1] However, the absence of scalable fabrication strategies for reliable vertical interconnect access (VIA) remains a critical bottleneck in the transition from proof-of-concept devices to integrated systems.

Here, we report the first back-end-of-line-compatible fabrication framework for the monolithic integration of vertically stacked perovskite photodetectors with an active readout backplane. By establishing perovskite-specific multilayer patterning and sidewall passivation protocols, a robust vertical interconnect strategy is realized, providing low-leakage electrical access from stacked perovskite devices to the underlying readout electrode.

Using this approach, we demonstrate the first 32 × 32 × 3 vertically stacked perovskite color image sensor integrated with a thin-film-transistor active-matrix backplane, showing improved light utilization with geometrical fill factors exceeding 70%. The sensor also exhibits high spectral selectivity and uniformity.

Beyond imaging, this work establishes a scalable integration strategy for perovskite optoelectronics, enabling co-localization of spectrally selective absorption, emission, and electronic functionality within a single pixel. This capability opens new opportunities for multispectral sensing, light-emitting devices, and in-pixel or neuromorphic computation, paving the way toward compact, high-efficiency, and multifunctional optoelectronic systems.

References:

[1] Tsarev, S., Proniakova, D., Liu, X. et al. Vertically stacked monolithic perovskite colour photodetectors. Nature 642, 592–598 (2025).

Acknowledgements:

The work was financially supported by ETH Zürich through the ETH+ Project SynMatLab: Laboratory for Multiscale Materials Synthesis.

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