Publication date: 22nd July 2026
AgBiS2 is a narrow-band-gap, water-stable semiconductor with strong visible-light absorption, making it a promising absorber material in devices for solar-driven photoelectrocatalysis (PEC)[1,2]. Although its photovoltaic properties have been widely studied, the influence of cation disorder on PEC performance remains largely unexplored[3,4]. Solvothermally synthesized AgBiS2 nanoparticles were processed in photoanode thin films via ultrasonic spray coating. A combination of X-ray diffraction and spectroscopic analyses reveal how thermal annealing partially homogenizes the cation distribution, showing lattice contraction and subtle band-structure tuning toward a slightly n-type behavior. The annealed electrodes exhibit higher photocurrents for water oxidation and increased donor density. The improved performance was also observed in a hole scavenger solution, which was employed to thoroughly characterize the behavior of the photoanodes: impedance spectroscopy suggests enhanced hole flux to the semiconductor/electrolyte interface, while transient absorption spectroscopy identifies sub-bandgap trap-mediated recombination as the primary limitation of the photoanode’s performance. These results support the implementation of AgBiS2 as low band gap absorber in electrode architectures and suggest its use with fast redox mediators for selective photooxidation for sustainable solar energy conversion as a promising application.
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