Publication date: 22nd July 2026
Halide perovskites are mixed ionic electronic semiconductors in which mobile ions strongly affect charge transport, hysteresis, and resistive switching. This ion-coupled response is attractive for memory and neuromorphic devices, but poorly controlled ion migration can also cause stochastic switching and limited reproducibility. A central challenge is to control ionic motion while preserving its functional role in device operation.
Here, we present two strategies to manage ionic processes in halide perovskite memristors. At the material level, compositional engineering of lead-free bismuth halide perovskites enables low voltage resistive switching with composition dependent hysteresis. Analysis of time-dependent responses reveals the ionic origin of switching and allows key physical parameters governing the dynamic hysteresis to be extracted.[1] At the device level, interfacial engineering suppresses stochastic filamentary pathways and redirects ion accumulation toward barrier modulation, resulting in forming free and programmable switching with dual inductive characteristics.[2]
These results show that mobile ions in halide perovskite memristors can be treated as controllable transport variables rather than only as sources of instability. By combining compositional control, interfacial engineering, and physical dynamic interpretation of hysteresis, this work provides a route toward reliable and programmable ion coupled electronic memory and neuromorphic hardware.
This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 (“PeroSpiker”).
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