Publication date: 22nd July 2026
Metal halide perovskites have emerged as remarkable semiconductors for photodetectors, offering strong optical absorption, tunable bandgaps, and low-noise operation comparable to established silicon technologies.[1] Nevertheless, most reported thin-film devices remain at the level of stand-alone photodetectors, limiting their practical implementation in imaging systems. Integration onto CMOS readout platform is non-trivial, as the perovskite deposition process must be compatible with pre-fabricated CMOS surfaces[2], and photolithographic patterning of perovskites is still challenging due to their instability under conventional semiconductor fabrication conditions.[3]
Here, we present a scalable and reliable vacuum-based deposition protocol for the high performance perovskite photodiodes (PePDs), achieving a peak detectivity of 9.2 × 10¹² Jones at −0.5 V, among the top-performing devices reported to date. Using this strategy, we demonstrate solvent-free monolithic integration of PePDs onto a 180-nm CMOS readout integrated circuit. The resulting image sensors exhibit stable operation with low noise and uniform response across the pixel array, confirming the viability of the process for system-level implementation. In addition, we introduce a modified-pixel architecture that mitigates electrical crosstalk between neighboring pixels, thereby improving image sharpness. Our work highlights the importance of processing-controlled integration in translating perovskite semiconductors from discrete photodetectors to practical imaging systems.
The work was financially supported by ETH Zürich through the ETH+ Project SynMatLab: Laboratory for Multiscale Materials Synthesis.
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