Temperature evolution of the band gap and its correlation with emission in perovskite crystals
Jan Kudrawiec a, Mirosław Mączka a
a Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PL, Okólna, 2, Wrocław, Poland
Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)
B1 Fundamentals and Emerging Phenomena in Halide Perovskites
Palma, Spain, 2026 October 26th - 30th
Organizers: Sascha Feldmann, Paulina Plochocka and Alexander Urban
Oral, Jan Kudrawiec, presentation 215
Publication date: 22nd July 2026

For conventional semiconductors the band gap values are usually governed by lattice expansion and electron-phonon interactions, leading to a gradual redshift upon heating. [1] In hybrid perovskites, however, such behavior can be non-monotonic due to stronger structural distortions and dynamic disorder of organic compounds. As a result the temperature dependence might be unconventional, resulting in phenomena’s such as increasing band gap values to a certain temperature as reported for 2-thiophenemethylammonium lead iodides.[2] Importantly, the evolution of the band gap is closely linked to the emission behavior, as temperature-induced modifications of the electronic structure affect exciton localization and recombination pathways. These changes not only alter the electronic structure but also affect carrier localization and radiative recombination, thereby influencing the emission properties. [3-4] Consequently, materials exhibiting unconventional temperature dependence of the band gap may display markedly different photoluminescence characteristics in comparison to classical semiconductors. In this presentation we present unusual evolution of the band hap in several halide perovskites combined with crystallography and optical studies to describe effects of such phenomena on the perovskite properties.

This research was supported by Polish National Science Centre. Grant no. NCN OPUS 25 2023/49/B/ST5/00119

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