Publication date: 22nd July 2026
Hole transport layers (HTLs) and electron transport layers (ETLs) are pivotal for emerging electronic and photonic devices. Wide bandgap, high charge mobility, and solution processability are essential properties to develop low-cost and commercialisable technologies. Metal-organic hybrids, such as organometallic compounds or coordination polymers (CPs), are promising due to the versatility of metal and organic ligand units, but they still largely lag behind in terms of development for device applications. Herein, we enhance charge-transport properties of hybrid semiconductors and consequently the performance of organic photovoltaics and photodetectors (OPVs and OPDs, respectively). For HTLs, we dope a p-type CP semiconductor, copper(I) thiocyanate (CuSCN), with copper(II) bromide (CuBr2) to obtain synergistic effects of p-doping and defect healing, respectively contributed by Cu+ and Br-. The improved hole-transport properties are demonstrated by the increased power conversion efficiencies (PCEs) of OPVs based on various active layers, achieving the highest PCE of 18.3% for CuSCN-based OPV devices (PM6:D18:L8-BO). Furthermore, our approach records a specific detectivity of 1.1 × 1012 Jones (850 nm, -2 V) for single-component OPDs, i.e., using solely Y6 (non-fullerene acceptor) to convert photons to current.[1] For electron transport, ferrocenyl-bis-furyl-2-ketone (FcFk2), an organometallic compound, is employed to form complexes with several ETLs, e.g., PFN-Br, PNDIT-F3N, and PDINN, for a variety of photoactive blends. The hybrid complexes exhibit faster electron extraction and reduce trap-assisted recombination of OPVs, yielding the champion PCE of 19.7% and 20.1% with anti-reflective coating. Upon 1-sun light illumination, FcFk2-based OPV cells also retain 80% of the initial PCE up to 700 h under maximum power point tracking.[2] The universal device improvements effectively demonstrate hybrid HTLs and ETLs as a promising class of materials to enhance the performance and stability of a wide range of electronic and photonic devices.
This work was supported by the East Asia Science and Innovation Area Joint Research Program (e-ASIA JRP). This research has received funding support from the National Science, Research and Innovation Fund (NSRF) via the Program Management Unit for Human Resources & Institutional Development, Research and Innovation (grant number B49G680107). P.S. and P.P. acknowledge Vidyasirimedhi Institute of Science and Technology (VISTEC) for research funding and VISTEC's Frontier Research Center (FRC) for scientific instruments. N.G. thanks the Engineering and Physics Science Research Council (EPSRC) (EP/T028513/1) and the European Union under grant agreement number 101172797.
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