Publication date: 22nd July 2026
Perovskite optoelectronic devices, including solar cells (PSCs) and light-emitting diodes (PeLEDs), have attracted significant attention owing to their exceptional optoelectronic properties and solution-process compatibility. However, the widespread use of conventional indium tin oxide (ITO) transparent conductive electrodes (TCEs) remains limited by their susceptibility to chemical degradation under acidic processing environments and concerns regarding material cost and sustainability.[1] Here, we develop sputtered nitrogen-doped SnO2 (NTO) transparent electrodes as chemically robust, indium-free, and scalable alternatives to ITO for high-performance perovskite optoelectronics.[1,2] By optimizing nitrogen incorporation during magnetron sputtering, NTO electrodes exhibit low sheet resistance (≈37–39 Ω sq-1), high visible transmittance (up to 86.17%), ultrasmooth surface morphology (root mean square roughness ≈1.2 nm), and favorable energy-level alignment with adjacent charge-transport layers. Nitrogen doping enhances electrical conductivity and chemical durability through the formation of Sn–N bonds and oxygen vacancies, while simultaneously improving interfacial homogeneity and charge extraction/injection characteristics. When integrated into chemical-bath-deposited SnO2-based PSCs, the optimized NTO electrode enables a power conversion efficiency of 20.43% and retains 93.30% of its initial performance after 3,000 h without encapsulation. Furthermore, NTO-based green-emitting PeLEDs achieve a peak external quantum efficiency of 20.82%, a luminance of 5,323.8 cd m-2, and more than twice the operational lifetime of comparable ITO-based devices.[2] These results demonstrate that NTO serves as a versatile transparent electrode platform capable of simultaneously enhancing efficiency, interfacial stability, and long-term durability across both photovoltaic and light-emitting perovskite technologies, providing a promising pathway toward sustainable next-generation optoelectronic devices.
This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (RS-2024-00358774). In addition, this work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (RS-2025-00523067). Finally, this work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under project no. SRFC-TC2103-04.
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