Metal halide perovskites are attracting increasing interest for radiation detection owing to their outstanding optoelectronic properties, solution processability, and compatibility with flexible device architectures. Beyond their technological potential, these materials provide a unique platform for investigating the interplay between electronic transport, ionic motion, and defect-mediated processes under high carrier injection conditions. Understanding these coupled phenomena is essential not only for improving detector performance but also for establishing general design principles applicable across perovskite-based electronic and optoelectronic devices.

In this talk, I will present recent advances in the investigation of transport mechanisms in low-dimensional and mixed-dimensional metal halide perovskites, with particular emphasis on the role of defects, trap-assisted transport, and carrier dynamics in determining device response and operational stability. Flexible photoconductive detectors based on layered low-dimensional perovskite thin films serve as model systems to probe charge transport under excitation conditions spanning UV illumination, X-rays, γ-rays, and proton beams. Although these materials exhibit excellent sensitivity and long-term stability, a universal sublinear dependence of the photocurrent on the carrier generation rate reveals the presence of complex defect-assisted photoconductive transport mechanisms.

Experimental investigations combined with physical modeling demonstrate that the detector response is governed by the interplay between carrier trapping, detrapping, and recombination through multiple trap distributions with different activation energies. The analysis identifies the injected charge density as a universal parameter describing transport over a broad range of irradiation conditions and highlights how defect occupation controls photoconductive gain and dynamic response. The intrinsic structural robustness of layered perovskites, together with their enhanced environmental stability, further contributes to reliable operation under prolonged irradiation.

Overall, these results highlight the central role of defect-mediated charge dynamics in determining the performance and operational stability of perovskite radiation detectors, providing valuable insights for the broader development of stable perovskite-based optoelectronic devices.