Publication date: 22nd July 2026
Field effect transport in perovskite devices has been conventionally challenging due to the undesirable ionic defect migration and dipolar disorder. We address both these challenges through suitable compositional engineering in methylammonium free based perovskites to realize high performance n-type and p-type perovskite FETs. We observe that incorporation of Sn based perovskite minimizes the ion-migration to an extent that clean hysteresis free field effect transport is realized with mobility values of > 5 cm2/Vs. Microscopic characterization brings out the role of Sn-vacancies which compensates the ionic defects to realize such high perfromance transistor. Next, we will discuss the possibility of utilizing compositional engineering through nanoscale facets in n-type FAPbI3 . This is particularly interesting in the context of realizing phase-pure FAPbI3 for field effect devices. We demonstrate compositional engineering of FAPbI3 using facet-rich nanocrystals to realize n-type transport > 1 cm2/Vs. These devices demonstrate exceptional operational bias stress stability with a marginal threshold voltage shift (∆Vth) ~ 0.7 V for 10 hours of continuous operation which quickly recovers back to pristine condition. Moreover the devices also exhibit > 1500 hours of ambient stability and > 8500 hours of performance retention under nitrogen atmosphere making them one of the champion n-type perovskite compositions till date in terms of stable devices for practical applications. Interestingly, inorporation of faceted CsPbBr3 nanocrystals into FAPbI3 modulates the temperature dependent transport to activated behaviour which is generally not observed in 3D Pb-based perovskite compositions indicating a resilence of gate induced ionic defect migration. By integrating electronic/ionic transport studies along with terahertz time-domain spectroscopy, spetroscopic, and structure–property correlations, we establish the microscopic mechanism behind these observed enhancement in transport properties.
SPS acknolwdges funding from ANRF through projects IPA/2021/000096 and ANRF/ARG/2025/001573/CS and support from DAE, Government of India through projects RIN-4001 and RNI-4011.
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