Publication date: 22nd July 2026
The current success of organic semiconductor technology is mainly driven by the development of organic light-emitting diodes (OLED), which are now routinely employed in display technologies. In the last decade, however, organic photovoltaics (OPV), leveraging the impressive improvement in device efficiency and stability, have gradually moved from a lab curiosity to a niche market. Organic photodetector (OPD), a technology based on organic photodiodes and thus closely related to OPV, is a new exciting avenue.
OPDs capable of detecting near-infrared (NIR) and short-wave infrared (SWIR) light are emerging as promising candidates for low-cost, large-area optoelectronic applications. Achieving efficient NIR detection with solution-processed organic semiconductors remains challenging due to their inherently limited absorption bandwidths. However, the advent of nonfullerene acceptors (NFAs) and ultra-low bandgap polymers has enabled precise control over molecular energy levels and optical band gaps, paving the way for extended infrared responsivity > 1000 nm. Building on advances in organic photovoltaics, the design of optimised donor:acceptor blends and the mitigation of charge carrier recombination are now central strategies for achieving high-efficiency and durable NIR–SWIR OPDs. This talk outlines material and device design principles that drive effective light-to-current conversion in this spectral range, highlighting pathways for the next generation of infrared organic photodetectors.
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