Publication date: 22nd July 2026
Memristive devices have significantly developed in the last decade, expanding their application horizon much beyond memory applications. Especially important is their functionalities as artificial neurons and synapses, making them promising building units for the next generation bio-inspired neuromorphic hardware. However, other applications such as selectors, HF switches and sensors are also intensively studied and reported. Recently, we demonstrated a new application of memristors using the quantum conductance levels as standard for resistance in accordance with the new directions given by SI. Here the main challenge was to stabilize the quantum conductance levels over time for reliable comparison/verification.
In this contribution the main criteria for selection of materials systems for quantum memristors will be discussed. The advantages and disadvantages of different switching layers and active electrodes will be highlighted in terms of selection criteria for obtaining reliable QPC. Effects of impurities and protons in the processes and stability of the resistances will be critically overviewed.
The method of electrochemical polishing will be introduced, that allows to ensure stable, reproducible and adjustable quantum point contacts. The fundamentals of this procedure will be explained and its application to nanoscale electrochemical memristive devices will be critically discussed.
and the main principle of using the QPC as a standard for resistance will be provided. Different approaches for stabilization of the quantum steps with low number of participating atoms (5 <) will be shown. Fundamental materials principles and processes will be highlighted.
