HIGH-RESPONSIVITY AND FAST RESPONSE DNTT-BASED PHOTOTRANSISTOR
Antonio Caldarelli a, Antonio Vettoliere b, Fabio Chiarella c, Luca Basta d, Patrizia Minutolo e, Marcello Campajola f, Vincenzo Izzo f, Gino Giusi g, Alberto Aloisio f h i, Ettore Sarnelli i
a CNR-SPIN Napoli, c/o Dipartimento di Fisica “Ettore Pancini,” Via Cinthia, 21, 80126 Napoli, Italy
b CNR-ISASI – Comprensorio Olivetti, Via Campo Flegrei 34, 80078 Pozzuoli (NA) - Italy
c CNR-SPIN Napoli, c/o Dipartimento di Fisica “Ettore Pancini,” P.le Tecchio 80, 80125 Napoli, Italy
d Dipartimento di Fisica “Ettore Pancini,” P.le Tecchio 80, 80125 Napoli, Italy
e CNR-STEMS, P.le Tecchio 80, 80125 Napoli, Italy
f INFN Napoli, c/o Dipartimento di Fisica “Ettore Pancini,” Via Cinthia, 21, 80126 Naples, Italy
g Dipartimento di Ingegneria, Università di Messina, Contrada di Dio, 98158 Sant'Agata, Messina, Italy
h Dipartimento di Fisica “Ettore Pancini,” Via Cinthia, 21, 80126 Napoli, Italy
i CNR-SPIN – Comprensorio Olivetti, Via Campo Flegrei 34, 80078 Pozzuoli (NA) - Italy
Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)
D3 Next-Generation Processing Strategies for Emerging Semiconductor Technologies
Palma, Spain, 2026 October 26th - 30th
Organizers: Martyn Mclachlan and Julianna Panidi
Poster, Antonio Caldarelli, 494
Publication date: 22nd July 2026

Organic phototransistors (OPTs) are promising as flexible, low-cost devices for flexible displays, wearable electronics, biosensors, environmental monitoring and, also for developing new concept devices for visible light communication (VLC) systems. In this work, we report on a dinaphtho-thieno-thiophene (DNTT) based OPT optimized for detecting blue light. The device employs an Al/Al2O3/DNTT/Au layered structure fabricated at ≤ 100 °C on PEN (see fig.1) by shadow-mask patterning. Key performance metrics include a high field-effect mobility (≈ 4.2 cm²/V·s) and a low contact resistance (≈ 12 kΩ·cm), which together enable efficient charge transport. Under low-intensity illumination (≈ 10⁻⁸ W/cm²) the phototransistor achieves an exceptional responsivity of ≈ 250 A/W, indicating significant photoconductive gain. Even at higher light levels (≈ 10⁻3 W/cm²), it maintains a large photosensitivity up to ≈ 120. High-frequency tests demonstrate a fast temporal response is realized (rise time ≈ 6.6 μs). The device thus offers a rare combination of high sensitivity and fast response. These results represent a substantial advancement for organic optoelectronics. It is worth noting that the OPTs we have developed are fully compatible with next-generation VLC receivers and other applications requiring lightweight, high-performance photodetectors in the visible range.

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