Understanding Iodide Migration through C60 in Lead Halide Perovskite Devices Using Photoluminescence Measurements
Lucienne van der Geest a, Erik Garnett a
a AMOLF, Science Park 104, Amsterdam, The Netherlands
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)
B4 Fundamental Understanding of Halide Perovskite Materials, Interfaces and Devices
Palma, Spain, 2026 October 26th - 30th
Organizers: Krishanu Dey and Sudipta Seth
Poster, Lucienne van der Geest, 524
Publication date: 22nd July 2026

The soft lattice of perovskite allows iodide ions to easily migrate through the crystal, both by drift due to the electric field within the solar cell, as well as by temperature-dependent diffusion. Depending on the operating conditions of the solar cell, iodide can accumulate at the interface between the perovskite and the charge transport layer (CTL), or even cross the CTL and end up at the electrode, with degradation of the device as a result. In this work, the rate of iodide migration through C60 layers of varying thicknesses is studied through photoluminescence (PL) measurements. This is done by subjecting a FAPbI3 / C60 / FAPbBr3 device stack to varying bias voltage and increased temperature, while keeping track of the PL peak position of the bromide perovskite. A redshift indicates a decreased bandgap, suggesting iodide has mixed into the FAPbBr3 layer after migration through the C60 layer. The timescale on which this effect is observed reveals the approximate rate of iodide migration through different thicknesses of C60. Comparing spectrally resolved PL maps before and after iodide migration may provide additional insights into the interface contact quality across the sample.

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