Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
Graphene-like two-dimensional (2D) crystals with non-zero band gaps exhibit highly interesting anisotropic dimensionality-dependent properties and bear high potential for ultrathin electronics. Amongst the most investigated 2D semiconductors, one material recently moved into focus: Exfoliated InSe, a van-der-Waals layered III-VI metal chalcogenide with an atomically smooth surface. It has proven its highly promising (opto-)electronic properties as high mobility field-effect transistor [1] and even outperformed other 2D crystal-based compounds like MoS2 and GaSe as high responsivity (visible to NIR) photodetector [2,3].
We have synthesized ultrathin 2D InSe layers (<6 nm with organic ligands) by a ligand templated colloidal method and have fully characterized the 2D structures with electron and atomic force microscopy, X-ray photoelectron spectroscopy and scattering methods [4].
By applying ultrafast transient absorption spectroscoy, we evaluate the charge carrier recombination dynamics in atomically thin InSe and extract (intrinsic) mobilities of ~30 cm2/Vs by using time-resolved terahertz spectroscopy.
The combination of colloidal synthesis and pump-probe spectroscopy allows us to assess the potential of solution-processed atomic InSe layers for next generation electronics.
[1] Sucharitakul, S. et al., Nano Lett, 2015, 15, 3815.
[2] Tamalampudi, S. R. et al., Nano Lett 2014, 14, 2800.
[3] Lei, S. et al., ACS Nano 2014, 8, 1263.
[4] Lauth, J. et al., Chem Mater. 2016, 28, 1728.
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