Tunable Charge Transport by Multiple Inelastic Cotunneling in ITO Nanocrystal Superlattices
Mahdi Samadi Khoshkhoo a, Santanu Maiti b, Frank Schreiber b c, Thomas Chassé a c, Marcus Scheele a c
a University of Tübingen, Auf der Morgenstelle, Tübingen, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2017 (NFM17)
SE1: Fundamental Processes in Semiconductor Nanocrystals
Barcelona, Spain, 2017 September 4th - 9th
Organizers: Arjan Houtepen and Zeger Hens
Oral, Mahdi Samadi Khoshkhoo, presentation 005
Publication date: 20th June 2016

Macroscopic superlattices of tin-doped indium oxide (ITO) nanocrystals (NCs) are prepared by self-assembly at the air/liquid interface followed by simultaneous ligand exchange with the organic semiconductors M-4,4’,4’’,4’’’-tetraaminophthalocyanine (M4APc, M = Cu, Co, Fe, Ni, Zn). By using X-ray photoelectron spectroscopy (XPS), grazing-incidence small-angle X-ray scattering (GISAXS), ultraviolet-visible-near infrared (UV–vis–NIR) spectroscopy, we demonstrate that the semiconductor molecules largely replace the native surfactant from the ITO NC surface and act as cross-linkers between neighboring particles. Using NCs produced from a single synthesis batch that are separated by similar interparticle distance (i.e. similar barrier length) but different ligand molecules (i.e. different barrier height), allows us to carefully study the influence of the organic capping layer on the transport properties. Transport measurements, focusing on the effect of the metal center of the ligand, reveal a ligand-dependent increase in electrical conductance by 6-9 orders of magnitude, suggesting that M4APc provides efficient electronic coupling for neighboring ITO NCs. The resulting I–V characteristics as well as the temperature dependence (7 - 300 K) of the zero-voltage conductance indicates that at low temperatures, transport across the arrays occurs via a sequence of inelastic cotunneling events, each involving ~3-4 ITO NCs. Our results indicate that the dielectric constant of semiconductor ligands, which is strongly affected by the metal center of molecule, significantly modulates charge transport, the Coulomb charging energy, and the localization length in particular.

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