Proceedings of nanoGe September Meeting 2017 (NFM17)
Publication date: 20th June 2016
Protective overlayers for light absorbers in photoelectrochemical (PEC) water splitting devices have gained considerable attention in recent years. They stabilize light absorbers which would normally be prone to chemical side reaction leading to degradation of the absorber. Atomic Layer Deposition (ALD) enables conformal and reproducible ultrathin protective layer growth even on highly structured substrates. One of the most widely investigated protective layers is amorphous TiO2, deposited by ALD at relatively low temperature (120-150 °C). We have thoroughly investigated these ALD TiO2 layers, deposited from tetrakis-(dimethylamido)titanium(IV) at 120 and 150°C, for their chemical composition as well as optical and electrochemical properties. Our main findings reveal a change of the flat band potential with thickness, reaching a stable value of about -50 to -100 mV vs RHE for films >30 nm with doping densities of ~ 1020 cm3. Furthermore, compared to Al2O3, such TiO2 layers always show higher leakage currents. Practical thicknesses to achieve pinhole-free films are discussed, and the damaging impact of O-rings on such electrochemical devices is evaluated.
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