Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.229
Publication date: 6th July 2018
III-V semiconductor quantum wells have obtained a central place in advanced logics and opto-electronics. In more recent research directions heading towards materials with entirely new functions, the effects of a nano scale geometry forming a periodic scattering potential in the lateral directions of the quantum well has been discussed and calculated. In case of a nano scale honeycomb geometry, and entirely new band structure emerges in which the highest valence and lowest conduction bands become Dirac cones at the K-points, while the semiconductor quantum well band gap remains nearly unaltered.
In this presentation we report on the fabrication of a 10 nm thick InGaAs quantum well (QW) on a n-type InP substrate with a honeycomb symmetry structure by creating a triangular anti-lattice inside the QW using high-resolution electron beam lithography. The morphology of the samples are studied using atomic force microscopy (AFM), elementary diffraction spectroscopy (EDS) and cross-section transmission electron microscopy (TEM). The quality of the samples is characterized using scanning electron microscopy (SEM), which is used for an extensive statistical analysis to determine the disorder inside the lattices. The results are supported by theoretical simulations on the bandstructure and density of states (DOS).
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