Proceedings of nanoGe Fall Meeting 2018 (NFM18)
Publication date: 6th July 2018
Quantum dots (QDs) have attracted considerable attention in the development of various optoelectronic applications. The scalable heterogeneous integration of high quality, yet stable QD films is required for low-cost sensors based on these materials. Here, we demonstrate the transfer printing of microscale patterns of Al2O3-passivated PbS QD films to realize large-scale integrated photodetector arrays with a 1st excitonic absorption peak at 2.1 µm wavelength. The process provides a facile approach to selectively pick-and-print passivated QDs assemblies on device structures with high precision. Transfer-printed photoconductor devices were realized and characterized at low bias voltage and optical power. Under 10 nW light illumination, the responsivity of our devices obtained at 1 V bias reached a maximum value of 25 A/W and 85 A/W for PbS QD films of 88 nm and 140 nm thick, respectively. This transfer printing approach enables the intimate integration of QD films / photoconductors with different cut-off wavelengths, enabling advanced, low-cost devices such as SWIR hyperspectral imagers.
We acknowledge support by the European Commission via the Marie-Sklodowska Curie action Phonsi (H2020-MSCA-ITN-642656).
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