Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.191
Publication date: 18th July 2019
The all-inorganic perovskite quantum dots (PQD’s) are significantly employed in light emitting diodes (LED’s) because of their low-cost preparation, high color purity, high thermal stability, and high photoluminescence quantum yield (PLQY). Among this all-inorganic PQD’s, CsPbI3 PQD’s are found to be exhibiting high PLQY (~ >95%) in solution and in thin films which would ultimately result in the higher internal quantum efficiencies in devices. Apart from this, the efficiency of a good working LED has related to a couple of other parameters such as charge injection efficiency and light extraction efficiency. The former one is related to charge transport, injection efficiency, shunt path, Joule heating, etc and the latter is related to the optical efficiency, which is purely depending on the device engineering. Here, we report the effect of various electron transport layers (ETL) (PO-T2T, TPBi, and BPhen) with buffer layers (Liq and LiF) on the performances of CsPbI3 PQD based LED’s. It is found that the band gap alignment of ETL and the nature of the buffer layer have an influence on the charge transport, stability, and device performances. The device performances derived from PO-T2T/Liq/Ag and PO-T2T/LiF/Al combinations are superior over other ETL investigated, leading an enhanced luminance and external quantum efficiency. Theoretical and spectroscopical studies will be also presented.
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