Toward nanocrystal-based active nanophotonic devices
Tung Dang Huu a b, Angela Vasanelli a, Yanko Todorov a, Carlo Sirtori a, Yoann Prado b, Christophe Delerue c, Emmanuel Lhuillier b
a Laboratoire de Physique de l'Ecole Normale Supérieure, Rue Lhomond, 24, Paris, France
b INSP, Institut des Nanosciences de Paris, Sorbonne Université, CNRS
c IEMN-Department of ISEN, UMR CNRS 8520, 59046 Lille, France
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Spring Meeting 2022 (NSM22)
#SNI22. Semiconductor Nanocrystals I: Basic Science (synthesis, spectroscopy, electronic structure, device and application)
Online, Spain, 2022 March 7th - 11th
Organizers: Emmanuel Lhuillier, Sandrine Ithurria and Angshuman Nag
Contributed talk, Tung Dang Huu, presentation 029
DOI: https://doi.org/10.29363/nanoge.nsm.2022.029
Publication date: 7th February 2022

Optical properties tunability is one of the essential characteristics of nanocrystals (NCs). Nonetheless, obtaining reconfigurable spectral response in NC-based optoelectronic devices remains a hardly explored domain. This is because the conventional strategies, such as exploiting Stark effect or integrating NCs into MEMS structures, are not straightforward to apply for NC-based devices due to high electrostatic field requirement and fabrication incompatibility. Here, we demonstrate optical tunability with bias in a device coupling HgTe1 NCs with a plasmonic structure. Bias tunability can be obtained thanks to the interplay between absorption inhomogeneity due to the plasmonic cavity2 and the NC hopping transport. As a result, 15 meV blueshift can be observed under the application of 3 V bias voltage for a device working in the extended short-wave infrared3. We show that hopping transport, which is usually seen as a limitation of NCs, can be combined with inhomogeneous absorption to obtain an active photonic NC-based device.

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