DOI: https://doi.org/10.29363/nanoge.neumatdecas.2023.072
Publication date: 9th January 2023
Ferroelectrics were one of the first materials classes to be proposed as non-volatile semiconducting memories, already 70 years ago. However, until recently, they have struggled to compete in the race towards miniaturization. Luckily, this gloomy prospect has now fully changed thanks to the advent of hafnia-based ferroelectrics, a novel highly polar phase of hafnia that is able to retain the polarization (memory) state down to the nanoscale. The mechanisms that help hafnia to counteract depolarization, which other ferroelectrics are not able to achieve, are not yet fully understood but it is clear that this material has brought ferroelectrics back into the race. In this talk I will present some of our work on ferroelectrics materials for brain-inspired devices, including synaptic behavior of hafnia-based ferroelectrics devices. In addition, I will show our progress towards the use of ferroelectric domain walls as nanoscale memristive networks.
Details of this work can be found at Y. Wei et al. Nature Mat. 17, 1095 (2018), Physical Review Applied 12, 031001 (2019), npj Quantum Materials 4, 62 (2019), Neuromorph. Comput. Eng. 2 044007 (2022), J. L. Rieck et al. Adv. Intellig. Systems, https://doi.org/10.1002/aisy.202200292
The authors acknowledge funding from EU's Horizon 2020, from the MSCA-ITN-2019 Innovative Training Networks programme “Materials for Neuromorphic Circuits” (MANIC) under the grant agreement no. 861153, as well as from the EU-H2020-RISE project “Memristive and multiferroic materials for logic units in nanoelectronics” (MELON) (grant no. SEP-2106565560). Financial support by the Groningen Cognitive Systems and Materials Center (CogniGron) and the Ubbo Emmius Foundation of the University of Groningen is gratefully acknowledged.
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