Publication date: 24th July 2026
Halide perovskite memristors are a promising platform for neuromorphic memory because their switching behavior arises from coupled ionic and electronic processes. These dynamic responses enable rich hysteretic memory functions, but uncontrolled ion migration can also lead to stochastic switching and limit the reliability. The central challenge is therefore to control ionic dynamics while preserving their functional role in memory operation.
Here, we show two complementary strategies to control ion mediated switching in halide perovskite memristors. Through interfacial engineering, stochastic filamentary pathways are suppressed, leading to forming free programmable switching governed by interfacial ionic accumulation and barrier modulation.[1] Through compositional engineering, lead free perovskite devices exhibit low voltage resistive switching, where analysis of time dependent responses reveals the underlying ionic dynamics and enables extraction of key physical parameters governing hysteresis. [2]
This work highlights that mobile ion can serve not only a source of instability, but also as controllable internal state variables for neuromorphic memory. By combining compositional design, interfacial engineering, and physical interpretation of hysteresis, halide perovskite memristors provide a versatile route toward programmable ion coupled electronic memory devices.
This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 (“PeroSpiker”).
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