Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
Publication date: 4th October 2020
Devices based on small-gap mercury chalcogenide semiconductor nanocrystal inks are demonstrating increasingly high performance short and mid-wave infrared photodetection. These systems have the potential to eliminate cryogenic cooling needs and vastly reduce device costs compared to the current single-crystal devices. To achieve this goal and develop these materials as mid-infrared lasers, more detailed understandings of the exciton and carrier dynamics are required. Here we describe mid-infrared picosecond absorption and photoluminescence studies on HgTe and HgSe nanocrystal quantum dots. Comparisons between interband and intraband transitions in intrinsic and n-type systems reveal interesting new phenomena such as slow or absent Auger relaxations in n-type systems, phonon bottlenecks, and brighter emission from intraband versus interband transitions at the same wavelength. Yet, the measured lifetimes are limited by other nonradiative processes unique to small-gap materials. Investigations of the temperature- and surface-dependence of the luminescence in novel HgX/CdX core/shell structures help unravel such mechanisms. In parallel to these fundamental spectroscopic studies, we discuss progress towards harnessing the Auger suppression in n-HgSe to achieve mid-infrared lasing in this system. The deeper understanding of nonradiative relaxation in small-gap nanocrystals afforded by these experiments provides a path towards realizing high performance infrared photodetection near room temperature and mid-infrared lasing with nanocrystal quantum dots.
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