Publication date: 2nd November 2020
The field of perovskite based solar cells have witnessed unprecedented activity in the last decade. While impressive gains have achieved in the efficiency, long time stability is an aspect that is under active research for a variety of reasons. Among the many factors that affect long term stability, ion migration and phase segregation have attracted significant recent interest.
Here, we explore the influence of these phenomena on the efficiency of solar cells through detailed numerical simulations. The influence of abovementioned phenomena is studied through self-consistent simulation of relevant semiconductor equations – Poisson’s equation and continuity equations for electrons, holes and mobile ions in the presence of photogeneration of carriers. Both bulk as well as interface recombination phenomena are considered in simulations. The equations are solved self-consistently, with Scharfetter-Gummel discretization for continuity equations and backward Euler scheme for time integration with adaptive time discretization to account for the slow varying ions as compared to the charge carriers. To explore phase segregation, the active material is treated as several domains of identical size. Depending on the extent of phase segregation, each domain is identified as either mixed halide, iodide or bromide with appropriate parameters.
In this contribution, we discuss the results from extensive statistical simulations to ascertain the influence of critical parameters like geometry or spatial pattern of phase segregation, energy level alignments, and transport parameters. Further, we highlight the influence of interface recombination and ion dynamics on the hysteresis in light JV characteristics.
This work was supported by Science and Engineering Research Board (SERB, project code:
CRG/2019/003163), Department of Science and Technology, India. The authors would like to
acknowledge CEN and NCPRE, IIT Bombay, India for computational facilities. We
acknowledge the financial support of University Grants Commission (UGC), India. PRN also
acknowledges Visvesvaraya Young Faculty Fellowship.
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