Photoelectrochemical properties of WO3 as a function of crystal structure, morphology and film characteristics
Gerko Oskam a, Manuel Rodríguez Pérez a, Geonel Rodríguez Gattorno a, Cecilia Chacón b
a Department of Applied Physics, CINVESTAV-IPN, Ant. Carr. a Progreso km 6, Cordemex, Mérida, Yucatán, 97310, Mexico
b CICATA-Legaria, Mexico, D.F., 11500, Mexico
Oral, Manuel Rodríguez Pérez, presentation 017
Publication date: 16th April 2014
Metal oxides may be the most promising materials for water splitting under solar illumination related to their stability and low cost. The materials properties strongly affect every aspect of the photoelectrochemical processes involved, and taking binary, ternary and quaternary metal oxides into account, a large number of potential candidates exist. In addition, candidate materials need to be synthesized using a repeatable and robust process, in order to ensure reproducible results. Tungsten trioxide (WO3) is a widely studied semiconductor with a band gap of around 2.6-3.2 eV, depending on crystal structure, which is stable in aqueous solution at pH < 5, has good charge transport properties and decent visible light harvesting. 
In this contribution, we will present two approaches for the synthesis and film deposition of WO3, and the application of the materials obtained in photoelectrochemical water oxidation. In the first approach, WO3 was synthesized by a highly controlled sol-gel method, allowing the preparation of different crystal structures (monoclinic, orthorhombic, and hexagonal) and different morphologies (rods, platelets, spherical particles). Electrophoretic deposition (EPD) was subsequently used to prepare WO3 films on FTO glass, maintaining the different crystal structures and morphologies. The photoelectrodes were characterized by UV-Vis spectrophotometry, SEM and XRD, and photoelectrochemical measurements were performed to determine the dependence of the photoresponse on the structural parameters. In the second approach, a simple, high volume synthesis method was used to prepare monoclinic WO3, and a paste was formulated in order to deposit films by screen printing. The photoelectrochemical properties were characterized as a function of film thickness, under either front side or back side illumination. Finally, we will present a tandem system of WO3 and a p-type oxide semiconductor in order to achieve water splitting under solar illumination without applied bias.

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