Publication date: 3rd July 2020
Imaging and sensing in the short-wave infrared (SWIR) range has been crucial in high-end applications (surveillance, defense, low-light imaging) and is now gaining importance in new consumer applications (automotive, AR/VR, smartphone depth sensing). As opposed to incumbent InGaAs and HgCdTe photodetectors, organic and quantum dot materials enable pixel stacks for integration directly on top of CMOS readout circuits [1,2]. This allows monolithic infrared imagers beyond the cut-off wavelength of silicon (above 1100 nm) and a compact sensor form factor. Patterning by photolithography makes it possible to pixelate the stack and integrate different types of pixels side-by-side. As for manufacturability, fabrication on wafer-scale enables high throughput and the resulting low cost of imagers. Monolithic integration offers high pixel density (even below 1 micrometer) and multi-megapixel resolution. In this presentation, we will summarize recent advances on pixel and integration concepts and present our pixel and sensor results. Imec prototype imagers demonstrate sensitivity at 940 and 1450 nm wavelength, with a roadmap towards multispectral arrays, opening a multitude of new applications.
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