A P3HT-Stabilised Spiro-OMeTAD Composite Hole Transport Material for High-Performance Perovskite Optoelectronic Devices
Siddhant Singh a, Abhishek K. Chauhan b, Swapnil Barthwal c, Ranju dalal a, Akila G. Prabhudessai a, Akshay Singh a, Ramesh Karuppannan a
a Department of Physics, Indian Institute of Science, Bengaluru-560012, Karnataka, India.
b CHOSE (Centre for Hybrid and Organic Solar Energy), University of Rome Tor Ver gata, Italy.
c Department of Chemistry and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan-5290002, Israel
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Fall 2026 Conference (MATSUSFall26)
D2 Functional Materials for Emerging Photovoltaics: from Everyday Integration to Extreme Environments
Palma, Spain, 2026 October 26th - 30th
Organizers: Jessica Barichello, Stefania Cacovich and Fabio Matteocci
Poster, Siddhant Singh, 534
Publication date: 22nd July 2026

The advancement of perovskite optoelectronics is closely tied to the development of robust charge‑transport layers. While Spiro‑OMeTAD remains the benchmark hole‑transport material (HTM), its practical application is limited by stability issues inherent to chemical doping. This work explores a composite approach to enhance Spiro‑OMeTAD in triple‑cation perovskite solar cells (TC‑PSCs) by incorporating a low concentration of P3HT as a stabilising agent. The optimal composition (Spiro‑OMeTAD0.94 :P3HT0.06 , P6) synergistically combines favourable energetics with the hydrophobic nature and morphological compatibility of P3HT, leading to improved interfacial coverage and stability. In PSCs, the P6 composite achieves a PCE of 20.7%, outperforming pristine Spiro‑OMeTAD through enhanced hole extraction and reduced carrier lifetimes. Supporting analyses, including SCLC, EIS, and EQE, which confirm improved mobility, charge transport, and photocurrent generation, while MPPT validates stable operational output. The composite strategy also extends to photodetectors, where self‑powered devices exhibit responsivity gains of 46% (532 nm) and 24% (655 nm), with detectivities up to 3.8 × 10¹² Jones. Moreover, the P6 composite confers exceptional moisture resistance, suppressing δ‑phase evolution under 80% ± 5% RH and enabling unencapsulated devices to retain over 80% of their initial efficiency for 920 hours. This composite HTM architecture offers a scalable pathway to stable, high‑performance perovskite optoelectronics.

We acknowledge support from CeNSE facilities funded by MHRD, MeitY, and DST India. We thank the Indian Science Technology and Engineering facilities Map (I-STEM), a program supported by the Office of the Principal Scientific Advisor to the Govt. of India, for enabling access to the X-ray diffractometer (Smart Lab-Rigaku), Confocal Photoluminescence Raman Spectro Microscope (WITec Alpha 300R) and time-resolved fluorescence microscope (PicoQuant-MicroTime 200) at the Department of Physics, Indian Institute of Science, Bangalore, to carry out this work.

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